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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1294 DESCRIPTION With TO-3P(I) package Wide area of safe operation High DC current gain Darlington APPLICATIONS Power regulator for line operated TV PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER INC Collector-base voltage Collector-emitter voltage E SEM ANG H Open base OND IC CONDITIONS TOR UC VALUE 60A 60A 6 5 20 15 15 UNIT V V V A A W ae ae Open emitter Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature Open collector TC=25ae 80 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SD1294 SYMBOL TYP. MAX UNIT VCEO Collector-emitter breakdown voltage IC=100mA ;IB=0 45 75 V VCBO Collector-base breakdown voltage IC=100mA ;IE=0 45 75 V VCEsat-1 Collector-emitter saturation voltage IC=0.5A ;IB=1mA 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=1A; IB=1mA 2.5 V VBE Base-emitter on voltage IC=0.5A;VCE=5V 1.8 V IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=0.5A ; VCE=5V 2000 CHA IN E SEM NG OND IC TOR UC 20000 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1294 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimentions 3 |
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